Converter series for gate circuits

Murata's MGJ1 1 W dc-dc converter series are designed for driving high- and low-side gate circuits such as insulated-gate bipolar transistors (IGBTs) and silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) for optimal efficiency.
By Murata Power Solutions August 9, 2016

Murata's MGJ1 1 W dc-dc converter series are designed for driving high- and low-side gate circuits such as insulated-gate bipolar transistors (IGBTs) and silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) for optimal efficienMurata’s MGJ1 1 W dc-dc converter series are designed for driving high- and low-side gate circuits such as insulated-gate bipolar transistors (IGBTs) and silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) for optimal efficiency. With high isolation characteristics, up to 5.2 kVdc, the MGJ1 offers the popular nominal output voltage combinations of +15/-5, +15/-9, or +19/-5 Vdc. The series also offers a choice of 5, 12, or 24 Vdc input. The MGJ1 series is characterized for high dV/dt immunity, which is designed for continued operation in fast switching circuits, and partial discharge performance that contributes to a long service life. Also, the converter’s low input-to-output coupling capacitance assists in reducing the effects of electromagnetic interference (EMI). The series suits a broad range of medical applications and the converter also can be used for reinforced insulation by incorporating a 9.3 mm creepage and clearance space helps safety agency approvals for high working voltage applications.

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