Insulated gate bipolar transistor for harsh conditions
STMicroelectronics' H series 1200V insulated gate bipolar transistors (IGBTs) are designed to boost energy efficiency and ruggedness in applications and have an integrated anti-parallel diode as well as electromagnetic interference.
STMicroelectronics' H series 1200 V insulated gate bipolar transistors (IGBTs) are designed to boost energy efficiency and ruggedness in applications such as solar inverters, welders, uninterruptible power supplies, and Power-Factor Correction (PFC) converters.
The H series 1200 V IGBTs have the option of an integrated anti-parallel diode for hard-switching circuits and minimizing energy losses in circuits with a freewheel diode.
The IGBTs have a latch-up-free operation and a short-circuit time of 5µs (at 150 C starting junction temperature). The extended maximum operating junction temperature of 175 C helps enhance service lifetime and simplify system cooling.
Other features include EMI (electromagnetic interference) characteristics thanks to a waveform during switching events. A positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device, allows safer parallel operation in high-power applications.
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Before the calendar turned, 2016 already had the makings of a pivotal year for manufacturing, and for the world.
There were the big events for the year, including the United States as Partner Country at Hannover Messe in April and the 2016 International Manufacturing Technology Show in Chicago in September. There's also the matter of the U.S. presidential elections in November, which promise to shape policy in manufacturing for years to come.
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Read more: 2015 Salary Survey