Insulated gate bipolar transistor for harsh conditions

STMicroelectronics' H series 1200V insulated gate bipolar transistors (IGBTs) are designed to boost energy efficiency and ruggedness in applications and have an integrated anti-parallel diode as well as electromagnetic interference.

06/19/2014


STMicroelectronics' H series 1200V insulated gate bipolar transistors (IGBTs) are designed to boost energy efficiency and ruggedness in applications and have an integrated anti-parallel diode as well as electromagnetic interference. Courtesy: STMicroelectSTMicroelectronics' H series 1200 V insulated gate bipolar transistors (IGBTs) are designed to boost energy efficiency and ruggedness in applications such as solar inverters, welders, uninterruptible power supplies, and Power-Factor Correction (PFC) converters.

The H series 1200 V IGBTs have the option of an integrated anti-parallel diode for hard-switching circuits and minimizing energy losses in circuits with a freewheel diode.

The IGBTs have a latch-up-free operation and a short-circuit time of 5µs (at 150 C starting junction temperature). The extended maximum operating junction temperature of 175 C helps enhance service lifetime and simplify system cooling.

Other features include EMI (electromagnetic interference) characteristics thanks to a waveform during switching events. A positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device, allows safer parallel operation in high-power applications.

STMicroelectronics

www.st.com 

- Edited by CFE Media. See more Control Engineering energy and power products.



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